Fatigue characteristics of ferroelectric (Pb0.925La0.075)-(Zr0.65Ti0.35)0.981O3 thin films

被引：0
|
作者：
黄龙波
李佐宜
刘兴阶
缪向水
卢德新
机构：
[1] Huazhong University of Science and Technology
[2] China
[3] Department of Solid State Electronics
[4] Wuhan 430074
来源：
Science Bulletin | 1995年 / 09期
关键词：
ferroelectric thin film; fatigue characteristics; rf magnetron sputtering;
D O I：
暂无
中图分类号：
O484.4 [薄膜的性质];
学科分类号：
080501 ; 1406 ;
摘要：
Due to the applications in electronics and optics in the past two decades, ferroelectricthin films (BaTiO, PbTiO, (PbLa)(ZrTi)O(PLZT x/y/1-y), LiNbO, BiTiO,etc.)have been widely investigated. Especially, ferroelectric thin film memory, combining the ad-vantage of semiconductor memory with that of magnetic memory, has properties including highspeed, high density, nonvolatility and good radiation hardness, and can be compatible with
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收藏
页码：784 / 787
页数：4
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