Synergistic Effects of Solvent Vapor Assisted Spin-coating and Thermal Annealing on Enhancing the Carrier Mobility of Poly(3-hexylthiophene) Field-effect Transistors附视频

Poly（3-hexylthiophene）(P3 HT) thin films, obtained by normal spin-coating and solvent vapor assisted spin-coating（SVASP） before and after thermal annealing（TA）, and the corresponding devices were prepared to unravel the microstructure-property relationship, which is of great importance for the development of organic electronics. When SVASP-TA films were used as the active layers of the organic field-effect transistors,a hole mobility up to 0.38 cm2·V–1·s–1 was achieved. This mobility was one of the highest values and one order of magnitude higher than that of the normal spin-coating films based transistors. The relationship between the microstructure and the device performance was fully investigated by UV-Vis absorption spectra, grazing incident X-ray diffraction（GIXD）, and atomic force microscopy（AFM）. The impressive mobility was attributed to the high crystallinity and ordered molecule packing, which stem from the synergistic effects of SVASP and thermal annealing.