CMOS image sensors in ISSCC 2023

被引：0

作者：

Peng Feng ^{[1
,2
]}

Nanjian Wu ^{[1
,2
]}

Jian Liu ^{[1
,2
]}

Liyuan Liu ^{[1
,2
]}

机构：

[1] State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences

[2] Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2023年 / 04期

基金：

中国国家自然科学基金;

关键词：

D O I：

暂无

中图分类号：

TP391.41 []; TP212 [发送器（变换器）、传感器];

学科分类号：

080202 ; 080203 ;

摘要：

In IEEE International Solid-State Circuits Conference(ISSCC) 2023, CMOS process is still the dominating fabrication technology for image sensors, and three-dimensional(3D)wafer-stacked process with Cu–Cu pixel-level connection has been adopted to achieve small pixel size and high integration level. The development of CMOS image sensors(CIS) is still focusing on the trends of high performance and more functionalities,

引用

页码：10 / 11

页数：2