Light-emitting devices based on atomically thin MoSe2

Atomically thin MoSe2layers, as a core member of the transition metal dichalcogenides(TMDs) family, benefit from their appealing properties, including tunable band gaps, high exciton binding energies, and giant oscillator strengths, thus providing an intriguing platform for optoelectronic applications of light-emitting diodes(LEDs), field-effect transistors(FETs), single-photon emitters(SPEs), and coherent light sources(CLSs). Moreover, these MoSe2layers can realize strong excitonic emission in the near-infrared wavelengths, which can be combined with the silicon-based integration technologies and further encourage the development of the new generation technologies of on-chip optical interconnection, quantum computing, and quantum information processing. Herein, we overview the state-of-the-art applications of light-emitting devices based on twodimensional MoSe2layers. Firstly, we introduce recent developments in excitonic emission features from atomically thin MoSe2and their dependences on typical physical fields. Next, we focus on the exciton-polaritons and plasmon-exciton polaritons in MoSe2coupled to the diverse forms of optical microcavities. Then, we highlight the promising applications of LEDs, SPEs, and CLSs based on MoSe2and their heterostructures. Finally, we summarize the challenges and opportunities for high-quality emission of MoSe2and high-performance light-emitting devices.