共 4 条
- [1] Indirect-direct band gap transition of two-dimensional arsenic layered semiconductors—cousins of black phosphorus[J]. LUO Kun,CHEN ShiYou,DUAN ChunGang.Science China(Physics,Mechanics & Astronomy). 2015(08)
- [2] Thickness‐Dependent Carrier Transport Characteristics of a New 2D Elemental Semiconductor: Black Arsenic[J] . Mianzeng Zhong,Qinglin Xia,Longfei Pan,Yuqing Liu,Yabin Chen,Hui‐Xiong Deng,Jingbo Li,Zhongming Wei.Advanced Functional Materials . 2018 (43)
- [3] Black Arsenic: A Layered Semiconductor with Extreme In‐Plane Anisotropy[J] . Yabin Chen,Chaoyu Chen,Robert Kealhofer,Huili Liu,Zhiquan Yuan,Lili Jiang,Joonki Suh,Joonsuk Park,Changhyun Ko,Hwan Sung Choe,José Avila,Mianzeng Zhong,Zhongming Wei,Jingbo Li,Shushen Li,Hongjun Gao,Yunqi Liu,James Analytis,Qinglin Xia,Maria C. Asensio,Junqiao Wu.Advanced Materials . 2018 (30)
- [4] Atomically Thin Arsenene and Antimonene: Semimetal–Semiconductor and Indirect–Direct Band‐Gap Transitions[J] . Shengli Zhang,Zhong Yan,Yafei Li,Zhongfang Chen,Haibo Zeng.Angew. Chem. Int. Ed. . 2015 (10)