Fano resonance-enhanced Si/MoS2 photodetector

In this work,a Si∕MoS2heterojunction photodetector enhanced by hot electron injection through Fano resonance is developed.By preparing Au oligomers using capillary-assisted particle assembly (CAPA) on the silicon substrate with a nanohole array and covering few-layer MoS2with Au electrodes on top of the oligomer structures,the Fano resonance couples with a Si∕MoS2heterojunction.With on-resonance excitation,Fano resonance generated many hot electrons on the surface of oligomers,and the hot electrons were injected into MoS2,providing an increased current in the photodetector under a bias voltage.The photodetectors exhibited a broadband photoresponse ranging from 450 to 1064 nm,and a large responsivity up to 52 A/W at a wavelength of 785 nm under a bias voltage of 3 V.The demonstrated Fano resonance-enhanced Si∕MoS2heterojunction photodetector provides a strategy to improve the photoresponsivity of two-dimensional materials-based photodetectors for optoelectronic applications in the field of visible and near-infrared detection.