A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

被引:0
|
作者
张金灿 [1 ]
张玉明 [2 ]
吕红亮 [2 ]
张义门 [2 ]
刘博 [1 ]
张雷鸣 [1 ]
向菲 [1 ]
机构
[1] Electrical Engineering College Henan University of Science and Technology
[2] School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and
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中图分类号
TN322.8 []; TN752 [振荡器];
学科分类号
摘要
A fully integrated Ku-band voltage controlled oscillator(VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor(HBT) technology. To achieve the wide tuning range(TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to6.46 d Bm, and a phase noise of 94:9 d Bc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 m W from 5 V supply and occupies an area of 0.81 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.
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页码:160 / 164
页数:5
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