VERY LARGE BANDWIDTH STRAINED MQW DFB LASER AT 1.3 MU-M

被引：8
|
作者：
CHEN, TR
UNGAR, J
YEH, XL
BARCHAIM, N
机构：
[1] Ortel Corporation, Alhambra
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1995年 / 7卷 / 05期
关键词：
D O I：
10.1109/68.384509
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 3-dB bandwidth of 20 GHz has been demonstrated for a compressively strained multiquantum well InGaAsP-InP DFB laser operating at 1.3 mu m. The laser displayed superior static performance including very low threshold current (similar to 8 mA), high external quantum efficiency (0.44 mW/mA), high CW output power (>60 mW) and high temperature operation.
引用
收藏
页码：458 / 460
页数：3
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