STUDY OF THE SELECTIVITY OF NITRIDE TO SILICON ETCH RATE AND DAMAGE EFFECT CAUSED BY DRY ETCHING IN A SINGLE-WAFER ETCHER

被引：0

作者：

HUYNH, C ^{[1
]}

BEARDSLEY, G ^{[1
]}

BOYE, C ^{[1
]}

机构：

[1] IBM CORP,DIV GEN TECHNOL,ESSEX JUNCTION,VT 05454

来源：

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C446 / C446

页数：1

共 5 条

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[5] Anomalous Increase in Field-Effect Mobility in In-Ga-Zn-O Thin-Film Transistors Caused by Dry-Etching Damage Through Etch-Stop Layer
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