PROPERTIES OF TUNGSTEN-SILICON DIOXIDE INTERFACE

被引：15
|
作者：
POWELL, RJ [1 ]
BEAIRSTO, RC [1 ]
机构：
[1] BELL TELE LABS INC,MURRAY HILL,NJ 07974
来源：
SOLID-STATE ELECTRONICS | 1973年 / 16卷 / 02期
关键词：
D O I：
10.1016/0038-1101(73)90036-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：265 / 267
页数：3
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