GALVANOMAGNETIC AND THERMOELECTRIC PROPERTIES OF ANTIMONY FILMS

被引：15
|
作者：
VOLKLEIN, F
机构：
[1] Physikalisch-Technisches Institut, Akademie der Wissenschaften der D.D.R., DDR-6900 Jena
来源：
THIN SOLID FILMS | 1990年 / 191卷 / 01期
关键词：
D O I：
10.1016/0040-6090(90)90268-I
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical resistivity, its temperature coefficient, the Hall coefficient, magnetoresistance and thermoelectric power of antimony films with thicknesses of 30-250 nm were measured in the temperature range 80-400 K. From the data obtained the carrier concentrations and mobilities as functions of thickness and temperature are discussed in the framework of a two-band model. © 1990.
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页码：1 / 12
页数：12
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