Impact of crystal orientation and surface scattering on DG-MOSFETs in quasi-ballistic region

被引：0
|
作者：
Shen, Lei [1 ]
Di, Shaoyan [1 ]
Yin, Longxiang [1 ]
Li, Yun [1 ]
Liu, Xiaoyan [1 ]
Du, Gang [1 ]
机构：
[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2018年 / 39卷 / 07期
关键词：
crystal orientation; surface scattering; quasi-ballistic transport; Monte Carlo;
D O I：
10.1088/1674-4926/39/7/074002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The characteristics of nano scale n-type double gate MOSFETs with (100) and (110) surfaces are studied using 3D full band ensemble Monte Carlo simulator. The anisotropic surface scattering mechanism is investigated. The (100) case is sensitive to the gate voltage more than the (110) case. The impact of crystal orientation and surface scattering on transport features mainly reflects in the carrier velocity distribution. The electron transport features with (100) direction are greater than that with (110) direction, but are more likely to be affected by the surface scattering.
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页数：5
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