MODELS FOR RECOMBINATION AT GRAIN-BOUNDARIES

被引:1
|
作者
HEASELL, EL
机构
关键词
D O I
10.1088/0268-1242/2/2/004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:88 / 93
页数:6
相关论文
共 50 条
  • [1] CARRIER RECOMBINATION AT GRAIN-BOUNDARIES AND THE EFFECTIVE RECOMBINATION VELOCITY
    HWANG, W
    POON, E
    CARD, HC
    SOLID-STATE ELECTRONICS, 1983, 26 (06) : 599 - 603
  • [2] RECOMBINATION PROCESSES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS
    SAMAJ, L
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1987, 100 (01): : 157 - 167
  • [3] INFLUENCE OF GRAIN-BOUNDARIES ON THE RECOMBINATION RATE IN GERMANIUM
    WOLF, H
    FORKEL, D
    IWATSCHENKOBORHO, M
    MALZER, S
    RENN, M
    WITTHUHN, W
    HYPERFINE INTERACTIONS, 1987, 35 (1-4): : 723 - 727
  • [4] MODELS AND PROPERTIES OF GRAIN-BOUNDARIES AND PHASE BOUNDARIES
    GOUX, C
    KRISTALL UND TECHNIK-CRYSTAL RESEARCH AND TECHNOLOGY, 1979, 14 (03): : 251 - 267
  • [5] GENERAL GEOMETRICAL MODELS OF GRAIN-BOUNDARIES
    GRATIAS, D
    PORTIER, R
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-6): : 15 - 24
  • [6] GRAIN-BOUNDARIES IN MODELS OF CONVECTIVE PATTERNS
    TESAURO, G
    CROSS, MC
    PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1987, 56 (06): : 703 - 724
  • [7] RECOMBINATION EFFECTS AND IMPURITY SEGREGATION AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON
    PIZZINI, S
    SANDRINELLI, A
    BEGHI, M
    NARDUCCI, D
    FABBRI, PL
    REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (07): : 631 - 636
  • [8] INFLUENCE OF DISLOCATION DENSITY ON RECOMBINATION AT GRAIN-BOUNDARIES IN MULTICRYSTALLINE SILICON
    SEIFERT, W
    MORGENSTERN, G
    KITTLER, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (09) : 1687 - 1691
  • [9] INFLUENCE OF GOLD DIFFUSION ON THE RECOMBINATION ACTIVITY OF GRAIN-BOUNDARIES IN SILICON
    PASQUINELLI, M
    JOURNAL DE PHYSIQUE III, 1992, 2 (03): : 303 - 311
  • [10] HARD-SPHERE MODELS FOR THE STRUCTURE OF GRAIN-BOUNDARIES
    FROST, HJ
    SPAEPEN, F
    JOURNAL DE PHYSIQUE, 1982, 43 (NC-6): : 73 - 82