PHOTOELECTROCHEMICAL DEPTH PROFILING OF MOLECULAR-BEAM EPITAXY GROWN GROUP-III-V HETEROSTRUCTURES

被引：2
|
作者：
WEI, C
RAJESHWAR, K
ALAVI, K
PATHAK, RN
WANG, LT
机构：
[1] UNIV TEXAS,DEPT CHEM,ARLINGTON,TX 76019
[2] UNIV TEXAS,DEPT ELECT ENGN,ARLINGTON,TX 76019
来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 11期
关键词：
D O I：
10.1063/1.107339
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A depth profiling technique is described for molecular beam epitaxy grown (Al,Ga)Al/GaAs heterostructures which combines photoelectrochemical layer-by-layer removal with analyses by photocurrent spectroscopy. The technique is illustrated for two types of samples having a graded and "flat" Al profile in the epilayer.
引用
收藏
页码：1348 / 1350
页数：3
相关论文
共 50 条
  • [1] ROTATIONAL SLIP IN III-V HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    LIND, MD
    SULLIVAN, GJ
    LIU, TY
    KROEMER, H
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (05) : 2746 - 2748
  • [2] NOVEL III/V HETEROSTRUCTURES FABRICATED BY METALORGANIC MOLECULAR-BEAM EPITAXY
    HEINECKE, H
    MILDE, A
    MATZ, R
    BAUR, B
    PRIMIG, R
    PHYSICA SCRIPTA, 1994, 55 : 14 - 19
  • [3] MOLECULAR-BEAM EPITAXY OF HETEROSTRUCTURES MADE OF III-V-COMPOUNDS
    KOPEV, PS
    LEDENTSOV, NN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (10): : 1093 - 1101
  • [4] DEPTH PROFILING OF INAS/INP AND INXGA1-XAS/INAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    BRUNI, MR
    GAMBACORTI, N
    KACIULIS, S
    MATTOGNO, G
    SIMEONE, MG
    VITICOLI, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 228 - 231
  • [5] Group-III nitride quantum heterostructures grown by molecular beam epitaxy
    Grandjean, N
    Damilano, B
    Massies, J
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2001, 13 (32) : 6945 - 6960
  • [6] INSTABILITIES OF (110) III-V COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY
    WANG, WI
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 630 - 636
  • [7] ALGAAS/GE/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    WANG, Y
    BARUCH, N
    WANG, WI
    CHENEY, ME
    HUANG, CI
    SCHERER, RL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (02): : 1300 - 1302
  • [8] SILICON METAL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    BEAN, JC
    POATE, JM
    APPLIED PHYSICS LETTERS, 1980, 37 (07) : 643 - 646
  • [9] ALGAAS/GAAS(111) HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    VINA, L
    WANG, WI
    APPLIED PHYSICS LETTERS, 1986, 48 (01) : 36 - 37
  • [10] GROWTH BY MOLECULAR-BEAM EPITAXY OF (RARE-EARTH GROUP-V ELEMENT) III-V SEMICONDUCTOR HETEROSTRUCTURES
    GUIVARCH, A
    LECORRE, A
    AUVRAY, P
    GUENAIS, B
    CAULET, J
    BALLINI, Y
    GUERIN, R
    DEPUTIER, S
    LECLANCHE, MC
    JEZEQUEL, G
    LEPINE, B
    QUEMERAIS, A
    SEBILLEAU, D
    JOURNAL OF MATERIALS RESEARCH, 1995, 10 (08) : 1942 - 1952
12345