A HETEROJUNCTION BIPOLAR-TRANSISTOR WITH SEPARATE CARRIER INJECTION AND CONFINEMENT

被引：47

作者：

LUO, LF ^{[1
]}

EVANS, HL ^{[1
]}

YANG, ES ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LAB,NEW YORK,NY 10027

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 09期

关键词：

D O I：

10.1109/16.34252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1844 / 1846

页数：3

共 50 条

[1] A FULLY PLANAR HETEROJUNCTION BIPOLAR-TRANSISTOR
TULLY, JW
HANT, W
OBRIEN, BB
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (11) : 615 - 617
[2] A COMPOUND EMITTER HETEROJUNCTION BIPOLAR-TRANSISTOR
CHOR, EF
PENG, CJ
COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 1993, 12 (04) : 319 - 330
[3] GRADED COLLECTOR HETEROJUNCTION BIPOLAR-TRANSISTOR
CHIU, LC
HARDER, C
MARGALIT, S
YARIV, A
APPLIED PHYSICS LETTERS, 1984, 44 (01) : 105 - 106
[4] ELECTROLUMINESCENCE FROM A HETEROJUNCTION BIPOLAR-TRANSISTOR
HAYES, JR
LEHENY, RF
TEMKIN, H
GOSSARD, AC
WIEGMANN, W
APPLIED PHYSICS LETTERS, 1984, 45 (05) : 537 - 539
[5] A NEW SOLUTION FOR MINORITY-CARRIER INJECTION INTO THE EMITTER OF A BIPOLAR-TRANSISTOR
AMANTEA, R
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (07) : 1231 - 1238
[6] HETEROJUNCTION BIPOLAR-TRANSISTOR DESIGN FOR POWER APPLICATIONS
GAO, GB
MORKOC, H
CHANG, MCF
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (09) : 1987 - 1997
[7] PLANAR HETEROJUNCTION BIPOLAR-TRANSISTOR WITH AN IMPLANTED BASE
YANG, JY
PLUMTON, DL
WHITE, WA
ELECTRONICS LETTERS, 1989, 25 (04) : 282 - 283
[8] QUANTUM-SWITCHED HETEROJUNCTION BIPOLAR-TRANSISTOR
WU, MC
TSANG, WT
APPLIED PHYSICS LETTERS, 1989, 55 (17) : 1771 - 1773
[9] GAAS GAASSB BASED HETEROJUNCTION BIPOLAR-TRANSISTOR
KHAMSEHPOUR, B
SINGER, KE
ELECTRONICS LETTERS, 1990, 26 (14) : 965 - 967
[10] AN MBE ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR
MILLER, DL
HARRIS, JS
ASBECK, PM
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1982, (63): : 579 - 580

← 1 2 3 4 5 →