CIRCUIT TO FACILITATE MEASUREMENT BY 4-PROBE METHOD OF RESISTIVITY OF SILICON IN RANGE 0.002 TO 10 000 OHM CM

被引：3

|

作者：

BARRY, AL

EDWARDS, WD

机构：

来源：

JOURNAL OF SCIENTIFIC INSTRUMENTS | 1962年 / 39卷 / 03期

关键词：

D O I：

10.1088/0950-7671/39/3/307

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

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页码：119 / &

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