共 50 条
- [1] A TEM INSITU STUDY OF DISLOCATION GLIDE IN INSB (III-V COMPOUND) [J]. REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (04): : 668 - 668
- [2] A TEM INSITU STUDY OF DISLOCATION GLIDE IN A III-V-COMPOUND (INSB) [J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1987, 55 (04): : 405 - 423
- [4] IMPLANTATION IN GAAS AND OTHER III-V COMPOUNDS [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1976, 21 (11): : 1339 - 1339
- [6] ON THE THERMODYNAMIC PROPERTIES OF THE III-V COMPOUNDS INSB, GASB, AND INAS [J]. ACTA METALLURGICA, 1958, 6 (05): : 320 - 326
- [7] Mechanical properties and dislocation dynamics in III-V compounds [J]. JOURNAL DE PHYSIQUE III, 1997, 7 (07): : 1435 - 1450
- [8] RADIATIVE TRANSITIONS IN GAAS AND OTHER III-V COMPOUNDS [J]. MINORITY CARRIERS IN III-V SEMICONDUCTORS: PHYSICS AND APPLICATIONS, 1993, 39 : 1 - 38
- [9] CHEMISORPTION GEOMETRY ON CLEAVED III-V SURFACES - CL ON GAAS, GASB, AND INSB [J]. PHYSICAL REVIEW B, 1979, 20 (04): : 1538 - 1545
- [10] STUDY OF AMORPHOUS III-V COMPOUNDS [J]. REVUE ROUMAINE DE PHYSIQUE, 1981, 26 (8-9): : 869 - 881