GREEN EMITTING ZN-DIFFUSED LPE GAP DIODES

被引：6

作者：

HERZOG, AH ^{[1
]}

MCLAIN, HF ^{[1
]}

机构：

[1] MONSANTO CO,800 N LINDBERGH BLVD,ST LOUIS,MO 63166

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 01期

关键词：

D O I：

10.1007/BF02654556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：265 / 277

页数：13

共 50 条

[1] ELECTROLUMINESCENCES OF ZN-DIFFUSED GAP DIODES AND THEIR ELECTRICAL CHARACTERISTICS
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[2] LONG-TERM STABILITY OF ZN-DIFFUSED GREEN EMITTING TGS GROWN GAP LEDS
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[3] ELECTROLUMINESCENCE SATURATION AND I-V MEASUREMENTS OF ZN-DIFFUSED GAP DIODES
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[4] ELECTROLUMINESCENT PROPERTIES OF ZN-DIFFUSED SH GAAS LIGHT-EMITTING DIODES
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[5] VOLTAGE DEPENDENCE OF CAPACITANCE OF ZN-DIFFUSED GAAS DIODES
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[6] GaP GREEN LIGHT EMITTING DIODES PREPARED BY LPE GROWTH.
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[7] HIGH-EFFICIENCY ZN-DIFFUSED GAAS ELECTROLUMINESCENT DIODES
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[8] INTERSTITIAL ZN SIGNATURE IN ZN-DIFFUSED INP
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[9] PHOTOVOLTAIC EFFECT IN ZN-DIFFUSED GAP P-N-JUNCTIONS
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[10] PHOTOLUMINESCENCE OF ZN-DIFFUSED AND ANNEALED INP
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