PRELIMINARY-RESULTS OF GAAS SINGLE-CRYSTAL GROWTH UNDER HIGH GRAVITY CONDITIONS

被引：4

作者：

ZHONG, XR ^{[1
]}

ZHOU, BJ ^{[1
]}

YAN, QM ^{[1
]}

CAO, FN ^{[1
]}

LI, CJ ^{[1
]}

LIN, LY ^{[1
]}

MA, WJ ^{[1
]}

ZHENG, Y ^{[1
]}

TAO, F ^{[1
]}

XUE, ML ^{[1
]}

机构：

[1] CHINESE ACAD SCI,INST MECH,BEIJING 100080,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 119卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90206-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaAs single crystals have been grown under high gravity conditions, up to 9g0, by a recrystallization method with decreasing temperature. The impurity striations in GaAs grown under high gravity become weak and indistinct with smaller striation spacings. The dislocation density of surcharge-grown GaAs increases with increase of centrifugal force. The cathodoluminescence results also show worse perfection in the GaAs grown at high gravity than at normal earth gravity.

引用

页码：74 / 78

页数：5

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