DRY ETCHING FOR THE FABRICATION OF INTEGRATED-CIRCUITS IN III-V-COMPOUND SEMICONDUCTORS

被引：0

作者：

COOPER, CB

SALIMIAN, S

DAY, ME

机构：

来源：

SOLID STATE TECHNOLOGY | 1989年 / 32卷 / 01期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：109 / 112

页数：4

共 50 条

[1] SELECTIVE PHOTOCHEMICAL DRY ETCHING OF III-V-COMPOUND SEMICONDUCTORS
ASHBY, CIH
MYERS, DR
SOLID STATE TECHNOLOGY, 1989, 32 (04) : 129 - 132
[2] PLASMA-ETCHING OF III-V-COMPOUND SEMICONDUCTORS
DONNELLY, VM
FLAMM, DL
IBBOTSON, DE
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 626 - 628
[3] COMPARISON OF LASER-INDUCED ETCHING BEHAVIOR OF III-V-COMPOUND SEMICONDUCTORS
LEE, C
SAYAMA, H
TAKAI, M
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 56 (04): : 343 - 348
[4] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS - A REVIEW OF FABRICATION TECHNIQUES
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GUIVARCH, A
PELOUS, G
SOLID-STATE ELECTRONICS, 1983, 26 (03) : 179 - &
[5] SURFACE-ETCHING KINETICS OF HYDROGEN PLASMA ON III-V-COMPOUND SEMICONDUCTORS
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 637 - 638
[6] IMPLANTATION TEMPERATURE FOR III-V-COMPOUND SEMICONDUCTORS
GAMO, K
TAKAI, M
YAGITA, H
TAKADA, N
MASUDA, K
NAMBA, S
MIZOBUCHI, A
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (03): : 1086 - 1088
[7] ON THE SURFACE PHYSICS OF III-V-COMPOUND SEMICONDUCTORS
MONCH, W
FESTKORPERPROBLEME-ADVANCES IN SOLID STATE PHYICS, 1984, 24 : 229 - 268
[8] OHMIC CONTACTS TO III-V-COMPOUND SEMICONDUCTORS
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THIN SOLID FILMS, 1990, 193 (1-2) : 511 - 527
[9] DRY ETCHING OF VIA CONNECTIONS FOR GAAS MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS FABRICATION
SALIMIAN, S
COOPER, CB
DAY, ME
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1606 - 1610
[10] REACTIVE DRY ETCHING FOR FABRICATION OF VERY-LARGE-SCALE INTEGRATED-CIRCUITS
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MADER, H
SIEMENS FORSCHUNGS-UND ENTWICKLUNGSBERICHTE-SIEMENS RESEARCH AND DEVELOPMENT REPORTS, 1982, 11 (04): : 180 - 189

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