A NEW APPROACH TO THE HOOGE NOISE PARAMETER FOR 1/F NOISE IN SEMICONDUCTORS

被引：4
|
作者：
TACANO, M
机构：
[1] Electrochemical Laboratory, Tsukuba-shi Ibaraki, 305
来源：
SOLID-STATE ELECTRONICS | 1991年 / 34卷 / 08期
关键词：
D O I：
10.1016/0038-1101(91)90240-Y
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
[No abstract available]
引用
收藏
页码：917 / 918
页数：2
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