PRESSURE-DEPENDENCE OF AG PHOTODOPING IN AMORPHOUS AS-S FILMS

The photodoping process in Ag/As25S75 layers subjected to hydrostatic compression up to 100 kbar has been studied. With an increase in pressure, the response becomes faster and then quenched above a threshold pressure, which is 70'80 kbar when light is incident upon the Ag surface. The characteristic suggests that migration of Ag ions between As-S molecular clulsters and/or accumulation of electronic carriers in the Ag-doped region is responsible for the photodoping. © 1990 The American Physical Society.