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- [1] PIEZORESISTANCE AND MAGNETORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 779 - 780
- [2] PIEZORESISTANCE OF UNIAXIALLY DEFORMED N-TYPE GALLIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 110 - 112
- [4] Longitudinal magnetoresistance of uniaxially deformed n-type silicon BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS, 2022, 2 (106): : 111 - 116
- [5] COMMUTATION EFFECT IN UNIAXIALLY DEFORMED N-TYPE SILICON AND N-TYPE GERMANIUM .3. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 139 - 142
- [6] NEGATIVE DIFFERENTIAL CONDUCTANCE OF N-TYPE GE STRETCHED UNIAXIALLY ALONG ITS [111] AXIS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1229 - 1231
- [7] CHARACTERISTICS OF MULTITRANSIT GENERATION OF ACOUSTIC-WAVES IN N-TYPE INSB SUBJECTED TO A STRONG ELECTRIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (02): : 183 - 187
- [8] NERNST-ETTINGSHAUSEN TENSOR OF UNIAXIALLY DEFORMED N-TYPE SILICON AND N-TYPE GERMANIUM .2. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (10): : 1091 - 1093
- [9] PIEZORESISTANCE OF N-TYPE GE DEFORMED ALONG AN AXIS ORIENTED SYMMETRICALLY RELATIVE TO ALL CONSTANT-ENERGY ELLIPSOIDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (11): : 1296 - 1297
- [10] ANISOTROPY OF TRANSVERSE MICROWAVE CONDUCTIVITY OF N-TYPE GE IN A STRONG ELECTRIC-FIELD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 222 - 223