THE NEW DOUBLE-SIDED SILICON MICROVERTEX DETECTOR FOR THE L3 EXPERIMENT

被引：3

作者：

ADRIANI, O

ALCARAZ, J

AHLEN, S

AMBROSI, G

BASCHIROTTO, A

BATTISTON, R

BAY, A

BENCZE, G

BERTUCCI, B

BIASINI, M

BILEI, GM

BOBBINK, GJ

BOSETTI, M

BROOKS, ML

BUSENITZ, J

BURGER, WJ

CAMPS, C

CARIA, M

CASTELLINI, G

CHEN, A

COAN, TE

COMMICHAU, V

DIBITONTO, D

DUINKER, P

EASO, S

EXTERMANN, P

FIANDRINI, E

GOUGAS, A

HANGARTER, K

HAUVILLER, C

HERVE, A

HOU, S

JOSA, I

KAPUSTINSKI, JS

KIM, D

KINNISON, WW

KORNIS, J

KRASTEV, VR

LANDI, G

LEBEAU, M

LECOMTE, P

LEE, DM

LEISTE, R

LIN, WT

LOHMANN, W

MASSETTI, R

MILLS, GB

NOWAK, H

PASSALEVA, G

PAUL, T

机构：

[1] UNIV ALABAMA, TUSCALOOSA, AL 35401 USA

[2] RMKI, BUDAPEST, HUNGARY

[3] INFN, FLORENCE, ITALY

[4] IROE, FLORENCE, ITALY

[5] LANL, LOS ALAMOS, NM USA

[6] LAPP, ANNECY, FRANCE

[7] NIKHEE, AMSTERDAM, NETHERLANDS

[8] NCU, CHUNGLI, TAIWAN

[9] DESY, ZEUTHEN, GERMANY

[10] NATL TSING HUA UNIV, HSINCHU 300, TAIWAN

[11] SWISS FED INST TECHNOL, CH-8006 ZURICH, SWITZERLAND

[12] UNIV LAUSANNE, CH-1000 LAUSANNE 17, SWITZERLAND

[13] UNIV MILAN, INFN, I-20122 MILAN, ITALY

[14] UNIV PERUGIA, INFN, I-06100 PERUGIA, ITALY

[15] BOSTON UNIV, BOSTON, MA 02215 USA

[16] TECH UNIV BUDAPEST, INST PHYS, H-1521 BUDAPEST, HUNGARY

[17] CERN, CH-1211 GENEVA 23, SWITZERLAND

[18] UNIV GENEVA, CH-1211 GENEVA 4, SWITZERLAND

[19] JOHNS HOPKINS UNIV, BALTIMORE, MD 21218 USA

[20] RHEIN WESTFAL TH AACHEN, INST PHYS 3, W-5100 AACHEN, GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 348卷 / 2-3期

关键词：

D O I：

10.1016/0168-9002(94)90774-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The new technologies used in the construction of the L3 Silicon Microvertex Detector (SMD) at LEP are presented. The SMD consists of two cylindrical layers of double sided silicon sensors to provide very precise measurements of both r(phi) and z coordinates. In order to minimize the amount of material in the central region, a Kapton fanout has been developed to bring the signals of the z strips (transverse coordinate) to the end of the mechanical structure. To get rid of the leakage currents a new capacitor chip, with diode protection against overvoltages, has been designed and used. In addition, a solution based on optodecoupling has been adopted to read the silicon n-side strips operating at the bias voltage.

引用

页码：431 / 435

页数：5

共 50 条

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ADAM, A
AHLEN, S
AMBROSI, G
BABUCCI, E
BASCHIROTTI, A
BATTISTON, R
BAYJ, A
LBENCZE, GY
BERTUCCI, B
BIASINI, M
BILEI, GM
BOBBINK, GJ
BOSETTI, M
BROOKS, ML
BUSENITZ, J
BURGER, WJ
CAMPS, C
CARIA, M
CASTELLINI, G
CHECCUCCI, B
CHEN, A
COAN, TE
COMMICHAU, V
DIBITONTO, D
DUINKER, P
EASO, S
EXTERMANN, P
FIANDRINI, E
GOUGAS, A
HANGARTNE, RK
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HERVE, A
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JOSA, I
KAPUSTINSKY, JS
KIM, D
KINNISON, WW
KORNIS, J
KRASTEV, VR
LANDI, G
LEBEAU, M
LECOMTE, P
LEE, DM
LEISTE, R
LEJEUNE, E
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LOHMANN, W
MARIN, A
MASSETTI, R
MILLS, GB
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