BORON ELIMINATION FROM ELIMINATION BY INDUCTIVE PLASMA WITH BIAS APPLIED

被引：4

作者：

COMBES, R ^{[1
]}

MORVAN, D ^{[1
]}

PICARD, G ^{[1
]}

AMOUROUX, J ^{[1
]}

机构：

[1] ENSCP,ELECTROCHIM ANALYT & APPLIQUEE LAB,F-75005 PARIS,FRANCE

来源：

JOURNAL DE PHYSIQUE III | 1993年 / 3卷 / 05期

关键词：

D O I：

10.1051/jp3:1993173

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We analyzed purification mechanisms of silicon by inductive plasma with a fluoride slag. The aim is to study boron elimination from doped electronic grade silicon in function of the nature of the slag to obtain a photovoltaic grade silicon. The steady began with the calculation and the comparison of the stability diagram of boron compounds in presence of CaF2, BaF2 and MgF2. This study led us to conclude that BaF2 is the better slag for silicon purification. This has been confirmed by experience. In a second time, we made purifications under electric bias to enhance slag efficiency. We noticed that BaF2 is more sensitive to electric bias than other slags.

引用

页码：921 / 943

页数：23

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