共 50 条
- [1] SPECTRUM OF IMPURITY STATES IN GAAS-O SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (10): : 1199 - 1200
- [2] IMPURITY PHOTOCONDUCTIVITY OF GAAS-O IN STRONG ELECTRIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (06): : 620 - 623
- [3] KINETICS OF THE CHARGING OF IMPURITY LEVELS IN S-TYPE DIODES MADE OF GAAS-O SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 561 - 562
- [4] ORIGIN OF SLOW DOMAINS IN GAAS-O JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (11): : 2265 - 2280
- [5] ELECTRON-STATES OF LOCAL CENTERS IN N-TYPE GAAS-O SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 876 - 878
- [7] FIELD-DEPENDENCE OF RADIATIVE RECOMBINATION IN GAAS-O SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (05): : 598 - 599
- [9] PHOTOCONDUCTIVITY, ELECTRON TRAPS AND LEVEL-BROADENING IN GAAS-O JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1978, 11 (11): : 2249 - 2263
- [10] STRONG FRANCK-CONDON-SHIFT OF A DEEP CENTER IN GAAS-O SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (11): : 1330 - 1331