APPLICATION OF OXIDE MASKING TO SILICON DIFFUSED TRANSISTORS

被引：0

|

作者：

LANZL, RH

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1959年 / 106卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C62 / C62

页数：1

相关论文

共 50 条

[1] MOLTEN DIFFUSED SILICON TRANSISTORS
TAUCHI, S
SOLID-STATE ELECTRONICS, 1961, 2 (04) : 216 - &
[2] DIFFUSED EMITTER AND BASE SILICON TRANSISTORS
TANENBAUM, M
THOMAS, DE
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (01): : 1 - 22
[3] A HIGH-FREQUENCY PNP DIFFUSED SILICON TRANSISTOR PRODUCED BY THE OXIDE MASKING TECHNIQUE
STAVIK, O
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (03) : C67 - C68
[4] A DOUBLE DIFFUSED SILICON HIGH-FREQUENCY SWITCHING TRANSISTOR PRODUCED BY OXIDE MASKING TECHNIQUES
ASCHNER, JF
BITTMANN, CA
HARE, WFJ
KLEIMACK, JJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (05) : 415 - 417
[5] A DOUBLE-DIFFUSED, SILICON, HIGH-FREQUENCY SWITCHING TRANSISTOR PRODUCED BY OXIDE MASKING TECHNIQUES
ASCHNER, JF
HARE, WFJ
KLEIMACK, JJ
BITTMAN, CA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1958, 105 (12) : C252 - C252
[6] FAILURE OF ALUMINIUM CONTACTS TO SILICON IN SHALLOW DIFFUSED TRANSISTORS
MCCARTHY, J
MICROELECTRONICS RELIABILITY, 1970, 9 (02) : 187 - &
[7] DESIGN CONSIDERATIONS FOR DOUBLE-DIFFUSED SILICON SWITCHING TRANSISTORS
KRESSEL, H
VELORIC, HS
BLICHER, A
RCA REVIEW, 1962, 23 (04): : 587 - 616
[8] TEMPERATURE DEPENDENCE OF IDEAL GAIN IN DOUBLE DIFFUSED SILICON TRANSISTORS
KAUFFMAN, WL
BERGH, AA
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 732 - +
[9] DOUBLE-DIFFUSED SILICON AND GERMANIUM MICROWAVE AMPLIFIER TRANSISTORS
ANDERSON, AJ
BOONE, DW
DENNIS, CF
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) : 437 - &
[10] PREFERENTIAL SILICON EPITAXY WITH OXIDE MASKING
SCHNABLE, GL
HILLEGAS, WJ
THORNTON, CG
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (08) : C185 - C185

← 1 2 3 4 5 →