共 50 条
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- [2] EFFECT OF SIO MOLECULE ADSORPTION OF FIELD ELECTRON-EMISSION FROM P-GE FIZIKA TVERDOGO TELA, 1972, 14 (01): : 294 - +
- [3] ELECTRICAL CONDUCTIVITY OF P-GE IN A STRONG MAGNETIC FIELD SOVIET PHYSICS SOLID STATE,USSR, 1970, 11 (10): : 2318 - +
- [4] INVESTIGATION OF SOME CHARACTERISTICS OF STIMULATED SUBMILLIMETER EMISSION IN P-GE ZHURNAL TEKHNICHESKOI FIZIKI, 1986, 56 (03): : 593 - 596
- [5] Kinetics of shallow acceptor impact ionization and recombination in p-Ge TERAHERTZ AND MID INFRARED RADIATION: BASIC RESEARCH AND PRACTICAL APPLICATIONS, WORKSHOP PROCEEDINGS, 2009, : 57 - 58
- [6] Effect of intracavity interface on p-Ge laser emission dynamics ADVANCED SOLID-STATE LASERS, 1999, 26 : 491 - 496
- [7] Kinetics of shallow acceptor impact ionization and recombination in p-Ge 16TH INTERNATIONAL CONFERENCE ON ELECTRON DYNAMICS IN SEMICONDUCTORS, OPTOELECTRONICS AND NANOSTRUCTURES (EDISON 16), 2009, 193
- [8] TRANSITION PROCESSES IN ELECTRON-EMISSION FROM P-GE SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (11): : 2880 - &
- [10] Influence of uniaxial stress on the polarization of spontaneous emission from p-Ge ULTRAFAST PHENOMENA IN SEMICONDUCTORS 2001, 2002, 384-3 : 221 - 225