共 50 条
- [1] INTERFACE STRUCTURE OF EPITAXIAL GE-SI(111) SYSTEM STUDIED BY HIGH-ENERGY ION-SCATTERING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 709 - 712
- [2] Interface structure of Ge/Si(111) during solid-phase epitaxy studied by medium-energy ion scattering J Vac Sci Technol A, 2 (289-294):
- [3] INTERFACE STRUCTURE OF GE/SI(111) DURING SOLID-PHASE EPITAXY STUDIED BY MEDIUM-ENERGY ION-SCATTERING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (02): : 289 - 294
- [4] ELECTRONIC-STRUCTURE OF SI AND GE(111) SURFACES AND THE SI-GE(111) INTERFACE PHYSICAL REVIEW B, 1985, 31 (04): : 2517 - 2520
- [6] GE ISLAND FORMATION ON SI(111) IN SOLID-PHASE EPITAXY STUDIED BY MEDIUM-ENERGY ION-SCATTERING JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (02): : 387 - 389
- [10] Dimer structures of Ge/Si(001) and Sb/Si(001) studied by medium-energy ion scattering Applied Surface Science, 1998, 130-132 : 133 - 138