MONTE-CARLO FORMULATION OF VELOCITY-FIELD CHARACTERISTICS AND EXPRESSIONS FOR ALXGA1-XAS

被引：3
|
作者：
ZHOU, X
TAN, HS
机构：
[1] School of Electrical and Electronic Engineering, Nanyang Technological University
来源：
INTERNATIONAL JOURNAL OF ELECTRONICS | 1994年 / 76卷 / 06期
关键词：
D O I：
10.1080/00207219408926016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Steady-state velocity-field characteristics in AlxGa1-xAs are calculated for a wide range of composition, doping, and temperature variations, using Monte Carlo techniques. The results are related to the scattering mechanisms which are responsible for the observed transport parameters. A single empirical expression is formulated to fit all the Monte Carlo data. This expression incorporates all the nonlinear transport effects and would be useful for numerical simulation of device models. A general methodology is also presented for formulating such expressions, and the results are applicable to modelling field-dependent mobility in AlxGa1-xAs devices.
引用
收藏
页码：1049 / 1062
页数：14
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