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- [3] AR ION LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF INGAAS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (1A): : L4 - L6
- [4] AR ION LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF INP JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1990, 29 (03): : 475 - 478
- [5] AR ION LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY OF INGAASP JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (4A): : L473 - L475
- [7] MECHANISM OF GAAS SELECTIVE GROWTH IN AR+ LASER-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (01): : L1 - L3
- [8] LASER ASSISTED MOLECULAR-BEAM EPITAXY (LAMBE) GAAS ON SILICON PHOTODETECTORS INSTITUTE OF PHYSICS CONFERENCE SERIES, 1990, (106): : 917 - 917