2-PHOTON INTERBAND-TRANSITIONS IN CROSSED ELECTRIC AND MAGNETIC-FIELDS IN SEMICONDUCTORS - NONLOCAL EFFECTS

被引：0

作者：

DESALVO, E ^{[1
]}

GIRLANDA, R ^{[1
]}

机构：

[1] UNIV MESSINA,IST STRUTTURA MATERIA,I-98166 SANT AGATA,ITALY

来源：

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS | 1993年 / 15卷 / 10期

关键词：

D O I：

10.1007/BF02463832

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It is shown that in the presence of a crossed electric and magnetic field the electronic states of a semiconductor in the effective-mass approximation are described by a Hamiltonian containing a non-local potential. In order to preserve the gauge invariance of the two-photon interband transition rate, the interaction Hamiltonian between the electrons and the incident radiation has to be generalized. For GaAs, the transition rate between two particular levels is evaluated in both length and velocity gauges demonstrating the correctness of our approach.

引用

页码：1321 / 1329

页数：9

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