ELECTRICAL-PROPERTIES OF THE MOS CAPACITOR STRUCTURE OF N-GAAS USING NATIVE ANODIC OXIDE

被引：0
|
作者：
ARORA, BM [1 ]
BIDNURKAR, MG [1 ]
NARSALE, AM [1 ]
机构：
[1] UNIV BOMBAY,DEPT PHYS,BOMBAY 400019,INDIA
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 1979年 / 17卷 / 06期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：341 / 347
页数：7
相关论文
共 50 条
  • [1] EFFECT OF ELECTRON-BEAM DEPOSITION RATE ON THE ELECTRICAL-PROPERTIES OF TI/N-GAAS AND PT/N-GAAS CONTACTS
    AURET, FD
    BARNARD, WO
    MEYER, WE
    MYBURG, G
    THIN SOLID FILMS, 1993, 235 (1-2) : 163 - 168
  • [2] Investigations on electrical characteristics and reliability properties of MOS capacitors using HfAlOx on n-GaAs substrates
    Das, P. S.
    Biswas, Abhijit
    MICROELECTRONICS RELIABILITY, 2012, 52 (01) : 112 - 117
  • [3] ELECTRICAL-PROPERTIES OF RH/N-GAAS CONTACTS - A COMPARISON OF DIFFERENT PREPARATION METHODS
    LUDWIG, MH
    MEYER, E
    HEYMANN, G
    CHASSE, T
    APPLIED SURFACE SCIENCE, 1993, 68 (04) : 445 - 451
  • [4] The influence of anodic oxide on the electron concentration in n-GaAs
    Kalygina, V. M.
    Vishnikina, V. V.
    Zarubin, A. N.
    Petrova, Yu S.
    Skakunov, M. S.
    Tolbanov, O. P.
    Tyazhev, A. V.
    Yaskevich, T. M.
    RUSSIAN PHYSICS JOURNAL, 2014, 56 (09) : 984 - 989
  • [5] The influence of anodic oxide on the electron concentration in n-GaAs
    V. M. Kalygina
    V. V. Vishnikina
    А. N. Zarubin
    Yu. S. Petrova
    М. S. Skakunov
    О. P. Тоlbanov
    А. V. Тyazhev
    Т. М. Yaskevich
    Russian Physics Journal, 2014, 56 : 984 - 989
  • [6] INTERFACE PROPERTIES OF LOW-TEMPERATURE-GROWN ANODIC OXIDE ON N-GAAS
    SINGH, BR
    DAGA, OP
    SHARMA, MK
    KHOKLE, WS
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1982, 52 (01) : 3 - 12
  • [7] Improvement in electrical properties at an n-GaAs/n-GaAs regrown interface using ammonium sulfide treatment
    Furuhata, N
    Shiraishi, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (01): : 10 - 14
  • [8] PREPARATION AND ELECTRICAL-PROPERTIES OF AN ANODIC OXIDE OF INP
    YAMAMOTO, A
    YAMAGUCHI, M
    UEMURA, C
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (12) : 2795 - 2801
  • [9] ANODIC OXIDES ON GAAS .3. ELECTRICAL-PROPERTIES
    BAYRAKTAROGLU, B
    HARTNAGEL, HL
    INTERNATIONAL JOURNAL OF ELECTRONICS, 1978, 45 (06) : 561 - 571
  • [10] ELECTRICAL-PROPERTIES OF THE ANODIC OXIDE HGZNTE INTERFACE
    ESQUIVIAS, I
    BAARS, J
    BRINK, D
    EGER, D
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S71 - S74
12345