共 50 条
- [1] AN ANALYSIS OF FACTORS AFFECTING THE STIMULATED-EMISSION THRESHOLD CURRENT IN THE PB1-XSNXSE HETEROJUNCTION INJECTION-LASER [J]. KVANTOVAYA ELEKTRONIKA, 1982, 9 (11): : 2140 - 2150
- [2] TO QUESTION OF NONRADIATED RECOMBINATION IN Pb1-xSnxSe LASER DIODES [J]. VESTNIK SAMARSKOGO GOSUDARSTVENNOGO TEKHNICHESKOGO UNIVERSITETA-SERIYA-FIZIKO-MATEMATICHESKIYE NAUKI, 2008, (01): : 178 - 179
- [3] ELECTROLYTIC POLISH FOR PB1-XSNXSE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) : 2145 - 2146
- [5] Photodiodes based on Pb1-xSnxSe epitaxial films [J]. 19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2007, 6636
- [6] STRUCTURE AND PROPERTIES OF PB1-XSNXSE FILMS [J]. INORGANIC MATERIALS, 1976, 12 (10): : 1458 - 1460