NOVEL MECHANISM OF A REAL-SPACE TRANSFER OSCILLATOR

被引:28
|
作者
SCHOLL, E [1 ]
AOKI, K [1 ]
机构
[1] KOBE UNIV,DEPT ELECT ENGN,KOBE 657,JAPAN
关键词
D O I
10.1063/1.104335
中图分类号
O59 [应用物理学];
学科分类号
摘要
A new mechanism for self-generated current oscillations in modulation-doped semiconductor heterostructures under parallel conduction is proposed. It is based upon the nonlinear dynamics of real-space electron transfer and delayed dielectric relaxation of the interface potential barrier resulting from the space charge in the doped AlGaAs layer. From our simulations we predict current oscillations in the 20-80 GHz range under dc bias.
引用
收藏
页码:1277 / 1279
页数:3
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