IMPURITY BAND AND CONDUCTIVITY OF COMPENSATED SEMICONDUCTORS

被引：0

作者：

SHKLOVSKII, BI

EFROS, AL

机构：

来源：

SOVIET PHYSICS JETP-USSR | 1971年 / 33卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：468 / +

页数：1

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[1] IMPURITY CONDUCTIVITY IN LOW COMPENSATED SEMICONDUCTORS
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[J]. PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1972, 50 (01): : 45 - +
[2] INJECTION CONDUCTIVITY IN COMPENSATED SEMICONDUCTORS WITH IMPURITY SCATTERING
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 92 - &
[3] CALCULATION OF CONDUCTIVITY OF IMPURITY BAND CONDUCTION IN SEMICONDUCTORS
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 304 - &
[4] OPTICAL CONDUCTIVITY IN THE IMPURITY BAND OF DOPED SEMICONDUCTORS
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 117 (01): : 313 - 322
[5] AC BAND CONDUCTIVITY IN COMPENSATED SEMICONDUCTORS WITH POTENTIAL FLUCTUATIONS
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[J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5987 - 5999
[6] IMPURITY SCREENING IN COMPENSATED SEMICONDUCTORS
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[J]. VESTNIK MOSKOVSKOGO UNIVERSITETA SERIYA 3 FIZIKA ASTRONOMIYA, 1994, 35 (02): : 74 - 79
[7] LOCAL DIFFERENCES OF IONIZATION ENERGY OF IMPURITIES IN COMPENSATED SEMICONDUCTORS AND INHOMOGENEITY OF IMPURITY CONDUCTIVITY
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 5 (02): : 415 - &
[8] DELOCALIZATION OF H - -LIKE IMPURITY STATES AND FORMATION OF BAND TYPE IMPURITY CONDUCTIVITY IN SEMICONDUCTORS.
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[J]. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 257 - 259
[9] DELOCALIZATION OF H- -LIKE IMPURITY STATES AND FORMATION OF BAND TYPE IMPURITY CONDUCTIVITY IN SEMICONDUCTORS
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[J]. PHYSICA B & C, 1983, 117 (MAR): : 257 - 259
[10] RELAXATION-TIMES OF IMPURITY PHOTOCONDUCTIVITY OF COMPENSATED SEMICONDUCTORS
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (12): : 1387 - 1391

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