FOURIER METHOD MODELING OF SEMICONDUCTOR-DEVICES

被引:3
|
作者
AXELRAD, V
机构
[1] Lehrstuhl für Integrerte Schaltungen, Technische Universität München
关键词
D O I
10.1109/43.62760
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
A novel high-order approach to numerical modeling of semiconductor devices is presented. The new method is a combination of the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in closed form of a trigonometric polynomial. The condition number of the diagonally dominant discrete equations is near unity. As a consequence, a highly accurate solution is achieved at moderate computer costs. The method has been implemented for one- and two-dimensional device models. Properties of the new procedure are demonstrated on examples. © 1990 IEEE
引用
收藏
页码:1225 / 1237
页数:13
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