THE ORIGIN OF MICROTWINNING IN ROOM-TEMPERATURE INDENTED UNDOPED AND N-DOPED GAAS CRYSTALS

被引：21
|
作者：
LEFEBVRE, A
VANDERSCHAEVE, G
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 107卷 / 02期
关键词：
D O I：
10.1002/pssa.2211070220
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：647 / 653
页数：7
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