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- [1] INVESTIGATION OF THE 300-DEGREES-K ANNEALING STAGE OF GERMANIUM IRRADIATED WITH FAST ELECTRONS AT 77-DEGREES-K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 878 - 880
- [2] RECOMBINATION IN P-TYPE SILICON IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (07): : 1280 - +
- [4] ELECTRICAL PROPERTIES OF INDIUM ANTIMONIDE IRRADIATED BY NEUTRONS AT 77 DEGREES K AND BY ELECTRONS AT 300 DEGREES K SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (09): : 2224 - +
- [6] FEATURES OF PHOTOCONDUCTIVITY SPECTRA OF P-TYPE SI IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 873 - +
- [7] HALL-MOBILITY IN P-TYPE SILICON IRRADIATED WITH FAST ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1116 - 1117
- [10] TRANSPORT PROPERTIES OF N-TYPE AND P-TYPE BI2SE3, 4.2 DEGREES K TO 300 DEGREES K BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (03): : 353 - 353