MODULATION OF TWIN-EMITTER SEMICONDUCTOR-LASERS BEYOND THE FREQUENCY OF RELAXATION OSCILLATIONS

被引：17
|
作者：
WILSON, GA [1 ]
DEFREEZ, RK [1 ]
WINFUL, HG [1 ]
机构：
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,ANN ARBOR,MI 48109
来源：
OPTICS COMMUNICATIONS | 1991年 / 82卷 / 3-4期
关键词：
D O I：
10.1016/0030-4018(91)90462-M
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Self-modulation above the relaxation oscillation frequency has been previously observed in a phased-array semiconductor lasers. Rate equations for a twin-emitter phased-array semiconductor laser are used to show that active optical modulation above the relaxation oscillation frequency can be achieved by introducing a 180-degrees relative phase shift in the emitter current modulation.
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页码：293 / 298
页数：6
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