LUMINESCENCE BAND AT HVM ALMOST-EQUAL-TO 1.2 EV INDUCED BY IRRADIATION AND HEAT-TREATMENT OF PARA-TYPE GAAS

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作者：

GLINCHUK, KD

GUROSHEV, VI

PROKHOROVICH, AV

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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 09期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：1003 / 1005

页数：3

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[3] IRRADIATION-INDUCED DEFECTS IN PARA-TYPE GAAS
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[7] IRRADIATION PLUS ANNEALING-INDUCED 1.20-EV EMISSION BAND IN P-TYPE GAAS
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[8] Influence of fast-neutron irradiation on the intensity of the copper-related luminescence band at hνm=1.01 eV in n-type GaAs
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[10] EFFECT OF 2.2 MEV ELECTRON-IRRADIATION AND ANNEALING ON THE NON-COPPER-INDUCED 1.35 EV EMISSION BAND IN N-TYPE GAAS
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