RAMAN-SCATTERING FROM CONDUCTION ELECTRONS

被引：0

作者：

HEALEY, D ^{[1
]}

机构：

[1] UNIV HONG KONG,PHYS DEPT,HONG KONG,HONG KONG

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1973年 / 34卷 / 05期

关键词：

D O I：

10.1143/JPSJ.34.1422

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1422 / 1422

页数：1

共 50 条

[1] RAMAN-SCATTERING DUE TO MAGNON-SPIN FLIP OF CONDUCTION ELECTRONS IN FERROMAGNETIC SEMICONDUCTORS
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[4] THE BUILDUP OF STIMULATED RAMAN-SCATTERING FROM SPONTANEOUS RAMAN-SCATTERING
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[7] RAMAN-SCATTERING FROM EXCITONS AND FROM PHOTO-EXCITED ELECTRONS AND HOLES
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[8] RESONANT RAMAN-SCATTERING FROM MOBILE ELECTRONS IN THE FRACTIONAL QUANTUM HALL REGIME
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[9] STIMULATED RAMAN-SCATTERING THRESHOLDS FROM ABSOLUTE RAMAN-SCATTERING CROSS SECTIONS
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[10] RAMAN-SCATTERING FROM CUCL
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