IMPROVEMENT OF A-SI1-XCX-H/A-SI-HP/I INTERFACE BY HYDROGEN-PLASMA FLUSHING STUDIED BY PHOTOLUMINESCENCE

被引：1

作者：

HAN, D ^{[1
]}

PANKOVE, JI ^{[1
]}

TSUO, YS ^{[1
]}

QIU, CH ^{[1
]}

XU, Y ^{[1
]}

机构：

[1] SOLAR ENERGY RES INST,GOLDEN,CO 80401

来源：

JOURNAL OF MATERIALS RESEARCH | 1991年 / 6卷 / 09期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1557/JMR.1991.1900

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A hydrogen-plasma reactive flush of the glow discharge reactor after boron-doped a-Si1-xCx : H film deposition has been used to reduce boron contamination of subsequently deposited intrinsic a-Si:H. Photoluminescence studies of p/i structures in a-Si:H show that the hydrogen-plasma process increases both the luminescence efficiency and the activation energy for the competing nonradiative recombination. The process also shifts the emission peak to higher energies by 25 meV.

引用

页码：1900 / 1904

页数：5

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