共 50 条
- [1] INTRINSIC CARRIER DENSITY AND ENERGY BAND STRUCTURE OF HgTexSe1 - x SOLID SOLUTIONS. 1977, 11 (08): : 900 - 901
- [2] PARAMETERS OF THE ENERGY-BAND STRUCTURE OF SIXGE1-X SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (09): : 1001 - 1003
- [3] INVESTIGATION OF THE ENERGY-BAND STRUCTURE OF INPXASYSB1-X-Y SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (04): : 467 - 468
- [4] INVESTIGATION OF THE ENERGY-BAND STRUCTURE OF INGAASP SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 446 - 448
- [5] ENERGY-BAND STRUCTURE OF A2XIV(AIIIBV)1-X SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (04): : 486 - 487
- [6] ENERGY-BAND STRUCTURE OF GAP-INAS SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 910 - 913
- [7] ENERGY-BAND STRUCTURE OF GERMANIUM-SILICON SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (05): : 481 - 482
- [8] INTRINSIC EXCITON LUMINESCENCE EMITTED BY IN1-XGAXP1-ZASZ SOLID-SOLUTIONS WITH AN INDIRECT ENERGY-BAND STRUCTURE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (09): : 1074 - 1075
- [9] ENERGY-BAND STRUCTURE OF SOLID-SOLUTIONS BASED ON ALUMINUM PHOSPHIDE AND ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1392 - 1394
- [10] INVESTIGATION OF THE ENERGY-BAND STRUCTURE OF IN1-XGAXP SOLID-SOLUTIONS BY THE PHOTOELECTRIC METHOD SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 557 - 558