A FIGURE OF MERIT FOR THE HIGH-FREQUENCY NOISE BEHAVIOR OF BIPOLAR-TRANSISTORS

被引：8

作者：

DEVREEDE, LCN ^{[1
]}

DEGRAAFF, HC ^{[1
]}

HURKX, GAM ^{[1
]}

TAURITZ, JL ^{[1
]}

BAETS, RGF ^{[1
]}

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1994年 / 29卷 / 10期

关键词：

D O I：

10.1109/4.315206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a new Figure of Merit for high frequency noise behavior for use in the evaluation and development of bipolar silicon process technology is introduced. Basic low noise design rules for optimum transistor biasing and emitter scaling are proposed.

引用

页码：1220 / 1226

页数：7

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