POSITRON-LIFETIME STUDIES OF HYDROGENATED AMORPHOUS-SILICON

被引：29
|
作者：
BHIDE, VG [1 ]
DUSANE, RO [1 ]
RAJARSHI, SV [1 ]
SHALIGRAM, AD [1 ]
DAVID, SK [1 ]
机构：
[1] UNIV POONA,DEPT ELECTR SCI,POONA 411007,MAHARASHTRA,INDIA
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 01期
关键词：
D O I：
10.1063/1.339167
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：108 / 116
页数：9
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