2-DIMENSIONAL SIMULATION ON THE ELECTRIC-FIELD SPIKE OF INDIUM-ANTIMONIDE CHARGE INJECTION DEVICES

被引：3
|
作者：
WU, CW
LIN, HH
机构：
[1] Department of Electrical Engineering, National Taiwan University, Taipei
来源：
SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 09期
关键词：
15;
D O I：
10.1016/0038-1101(90)90096-W
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The surface breakdown induced by the electric-field spike existing in the gate overlay region and the device perimeter region is suspected to be one of the main factors which limit the charge storage capacity of a narrow bandgap InSb dual-gate metal-insulator-semiconductor (MIS) charge injection device (CID). In this study, a two-dimensional theoretical simulation is used to investigate the effect of device parameters, including bias voltage, oxide thickness, gate structure, gate overlay length, and field oxide thickness on the electric-field spike height in an InSb CID. In addition, it is found that a graded oxide structure can be used to lower the electric field spike. © 1990.
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页码：1169 / 1178
页数：10
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