LARGE-AREA AND HIGHLY UNIFORM MOVPE GROWTH FOR ALGAAS/GAAS HEMT LSIS

A metallorganic vapor phase epitaxial (MOVPE) technique is used to produce successfully the epitaxial layer of a selectively doped AlGaAs/GaAs high electron mobility transistor (HEMT) structure. We have developed a method for mass producing HEMT-LSIs (large-scale integration). Our low pressure barrel reactor can grow twelve 3-inch wafers simultaneously using a wafer rotation system. The AlGaAs/GaAs heterointerface fluctuates by less than several angstroms over the entire wafer. Their electrical characteristics are excellent and the distribution in both layer thickness and donor concentration satisfy the demands for LSI applications. We used photolithography to fabricate MEMT devices with 0.6 mum long gates. We applied the MOVPE technique to a 64 kbit HEMT SRAM and obtained a typical address access time of 1.2 ns at a power dissipation of 5.9 W.