CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES

被引：3382
|
作者：
NAKAMURA, S
MUKAI, T
SENOH, M
机构：
[1] Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 13期
关键词：
D O I：
10.1063/1.111832
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Candela-class high-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped InGaN layer was used for the DH LEDs. The typical output power was 1500 muW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.
引用
下载
收藏
页码：1687 / 1689
页数：3
相关论文
共 50 条
  • [1] HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-GREEN-LIGHT-EMITTING DIODES
    NAKAMURA, S
    MUKAI, T
    SENOH, M
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (12) : 8189 - 8191
  • [2] ZN-DOPED INGNN GROWTH AND INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
    NAKAMURA, S
    JOURNAL OF CRYSTAL GROWTH, 1994, 145 (1-4) : 911 - 917
  • [3] PHOTOLUMINESCENCE DECAY DYNAMICS IN AN INGAN/ALGAN/GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODE
    MOHS, G
    FLUEGEL, B
    GIESSEN, H
    TAJALLI, H
    PEYGHAMBARIAN, N
    CHIU, PC
    PHILLIPS, BS
    OSINSKI, M
    APPLIED PHYSICS LETTERS, 1995, 67 (11) : 1515 - 1517
  • [4] INGAN/ALGAN BLUE-LIGHT-EMITTING DIODES
    NAKAMURA, S
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1995, 13 (03): : 705 - 710
  • [5] InGaN/AlGaN blue-light-emitting diodes
    Nakamura, Shuji
    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1995, 13 (3 pt 1): : 705 - 710
  • [6] P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes
    Nakamura, Shuji
    Senoh, Masayuki
    Mukai, Takashi
    Japanese Journal of Applied Physics, Part 2: Letters, 1993, 32 (1 A-B):
  • [7] P-GAN/N-INGAN/N-GAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES
    NAKAMURA, S
    SENOH, M
    MUKAI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1993, 32 (1A-B): : L8 - L11
  • [8] Electrical and optical properties of InGaN/AlGaN double heterostructure blue light emitting diodes
    Chen, Zhizhong
    Shen, Bo
    Yang, Kai
    Shi, Hongtao
    Chen, Peng
    Zheng, Yongdou
    Li, Xilin
    Bandaoti Guangdian/Semiconductor Optoelectronics, 19 (04): : 256 - 259
  • [9] Low-temperature study of current and electroluminescence in InGaN/AlGaN/GaN double-heterostructure blue light-emitting diodes
    Perlin, P
    Osinski, M
    Eliseev, PG
    Smagley, VA
    Mu, J
    Banas, M
    Sartori, P
    APPLIED PHYSICS LETTERS, 1996, 69 (12) : 1680 - 1682
  • [10] Analysis of InGaN high-brightness light-emitting diodes
    Lee, SJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11): : 5990 - 5993
12345