OBSERVATION OF GAAS(110) SURFACE BY AN ULTRAHIGH-VACUUM ATOMIC-FORCE MICROSCOPE

被引：11
|
作者：
SUGAWARA, Y
OHTA, M
HONTANI, KJ
MORITA, S
OSAKA, F
OHKOUCHI, S
SUZUKI, M
NAGAOKA, H
MISHIMA, S
OKADA, T
机构：
[1] OPTOELECTR TECHNOL RES LAB, TSUKUBA, IBARAKI 30026, JAPAN
[2] NIPPON TELEGRAPH & TEL PUBL CORP, INTERDISCIPLINARY RES LAB, ATSUKGI, KANAGAWA 24301, JAPAN
[3] OLYMPUS OPT CO LTD, RES DEPT, HACHIUJI, TOKYO 192, JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1994年 / 33卷 / 6B期
关键词：
UHV-AFM; ATOMIC FORCE MICROSCOPE; AFM; GAAS; ATOMIC RESOLUTION; SEMICONDUCTOR SURFACE; DANGLING BOND; CLEAN SURFACE;
D O I：
10.1143/JJAP.33.3739
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic-resolution imaging of a GaAs(110) surface with an ultrahigh-vacuum atomic force microscope (UHV-AFM) was performed for the very first time. We also observed that the rectangular lattice of the surface is atomically destroyed by sequential scanning. This atomic destruction might be due to the vertical loading force of the probing tip. Furthermore, we observed that the rows of atomic protrusions along the [11BAR0] direction were slightly in zigzag, and might be interpreted as quasi-one-dimensional zigzag chains consisting of alternating Ga and As atoms on the GaAs(110). These results suggest that the UHV-AFM has the potential for investigating semiconductor surfaces with dangling bonds on an atomic scale.
引用
收藏
页码：3739 / 3742
页数：4
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